Semiconductor fundamentals, crystal structure, concept of effective-mass, Fermi level, energy‐band diagram, concept of holes, intrinsic and extrinsic semiconductors, carrier concentration, carrier transport, scattering and drift of electrons and holes, drift and diffusion, generation and recombination, quasi-Fermi levels.
Semiconductor junctions, Physical description of p‐n junction, p-n junction under forward and reverse bias, current – voltage characteristics and temperature dependence, tunneling current and tunnel diode, small signal ac analysis.
Hetero junctions and Schottky junctions, Bipolar Junction Transistors, base width modulation, frequency limitations, pnpn diode, SCR, MOS capacitor, flat‐band and threshold voltages, MOSFETs, scaling laws of MOS transistors.
Optical absorption in a semiconductor, photovoltaic effect, solar cell, photo conductors, PIN photo diode, avalanche photo diode, LED, semiconductor LASER, negative conductance in semiconductors, transit time devices, IMPATT, Gunn device, IGBT.
Same as Reference
S.M. Sze, Semiconductor Physics and Devices, Wiley Student Edition, 2007.
Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices, Dorling Kindersley, 2007.
Robert F. Pierret, Semiconductor Device Fundamentals, Prentice Hall of India, 2007.
Donald Neamen, Semiconductor Physics and Devices, McGraw publishers.
Course Outcomes (COs):
CO1: Understand basic concepts of semiconductor theory including band diagrams, carrier transport, carrier concentrations, doping and continuity equation. Analyze continuity equations for various scenarios.
CO2: Understanding basic steps of fabricating p‐n junction, depletion region, built‐in voltage, energy band diagrams and operation of diodes
CO3: Analyze the operation of Tunnel diode and Metal‐Semiconductor junctions. Apply energy band concepts to Heterojunctions, Alloyed semiconductors and Bandgap engineering
CO4: Formation of bipolar junction transistors and operation, Early effect, MOS capacitor, CV characteristics