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Design, Development and Fabrication of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based terahertz devices for Space Applications

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Department
Physics
Category
Ph.D Thesis
Abstract
SC16D050_1.pdf
Document
SC16D050FT.pdf
Date
2023
Student/Scholar Details
Rakeshkumar Kaneriya
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